? semiconductor components industries, llc, 2007 june, 2007- rev. 5 1 publication order number: mkp3v120/d mkp3v120, mkp3v240 preferred device sidac high voltage bidirectional triggers bidirectional devices designed for direct interface with the ac power li ne. upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. conduction will continue like a triac until the main terminal current drops below the holding current. the plastic axial lead package provides high pulse current capability at low cost. glass passivation insures reliable operation. features ? high pressure sodium vapor lighting ? strobes and flashers ? ignitors ? high voltage regulators ? pulse generators ? used to trigger gates of scr's and triacs ? indicates ul registered - file #e116110 ? these are pb-free devices* maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off-state voltage (sine wave, 50 to 60 hz, t j = -40 to 125 c) mkp3v120 mkp3v240 v drm , v rrm 90 180 v on\state rms current (t l = 80 c, lead length = 3/8 , all conduction angles) i t(rms) 1.0 a peak non-repetitive surge current (60 hz one cycle sine wave, peak value, t j = 125 c) i tsm 20 a operating junction temperature range t j - 40 to +125 c storage temperature range t stg - 40 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction-to-lead (lead length = 3/8 ) r jl 15 c/w lead solder temperature (lead length 1/16 from case, 10 s max) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sidacs 1 ampere rms 120 and 240 volts preferred devices are recommended choices for future use and best overall value. device package shipping ? ordering information mkp3v120 axial lead* 500 units/box mt1 mt2 axial lead (no polarity) case 267 style 2 mkp3v240 mkp3v240rl () http://onsemi.com MKP3V240RLG mkp3v240g mkp3v120rlg mkp3v120g axial lead* 500 units/box 1500/tape & reel 500 units/box 500 units/box 1500/tape & reel 1500/tape & reel axial lead* axial lead* axial lead* axial lead* axial lead* ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. a mkp 3vxx0 yyww a = assembly location xx = 12 or 24 yy, y = year ww = work week = pb-free package (note: microdot may be in either location) marking diagram
mkp3v120, mkp3v240 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics repetitive peak off-state current (50 to 60 hz sine wave) v drm = 90 v mkp3v120 v drm = 180 v mkp3v240 i drm - - 10 a on characteristics breakover voltage, i bo = 200 a mkp3v120 mkp3v240 v bo 110 220 - - 130 250 v breakover current i bo - - 200 a peak on-state voltage (i tm = 1 a peak, pulse width 300 s, duty cycle 2%) v tm - 1.1 1.5 v dynamic holding current (sine wave, 60 hz, r l = 100 ) i h - - 100 ma switching resistance (sine wave, 50 to 60 hz) r s 0.1 - - k dynamic characteristics critical rate-of-rise of on-state current, critical damped waveform circuit (i pk = 130 , pulse width = 10 sec) di/dt - 120 - a/ s + current + voltage v tm i h symbol parameter i drm off state leakage current v drm off state repetitive blocking voltage v bo breakover voltage i bo breakover current i h holding current v tm on state voltage i tm peak on state current voltage current characteristic of sidac v drm i drm i tm slope = r s v (bo) r s (v (bo) Cv s ) (i s Ci (bo) ) i (bo) i s v s (bidirectional device)
mkp3v120, mkp3v240 http://onsemi.com 3 current derating figure 1. maximum case temperature figure 2. maximum ambient temperature figure 3. typical forward voltage figure 4. typical power dissipation 0.8 0 i t(av) , average on-state current (amps) 120 i t(av) , average on-state current (amps) 0.4 1.0 1.1 0.8 v t , instantaneous on-state voltage (volts) 0.3 0.4 0.2 0.1 0.9 t 1.2 0.2 0.6 i 100 0.6 1.0 130 , maximum allow able case temperature ( c) c 1.0 0 100 60 20 0.4 t 0.2 0.6 40 80 , maximum allow able ambient a 0.2 0.6 0 i t(av) , average on-state current (amps) 0.50 0.75 0.25 0.4 0.8 p 1.00 1.25 1.6 1.2 1.0 1.4 2.0 1.8 110 90 80 0.8 1.2 1.4 1.3 , instantaneous on-st ate current (amps) t 1.0 , maximum average power dissipation (watts) av 25 c 125 c 0.8 = conduction angle t j rated = 125 c = conduction angle t j rated = 125 c = conduction angle t j rated = 125 c 1.6 1.8 2.0 0 120 140 = 180 temperature ( c) = 180 = 180
mkp3v120, mkp3v240 http://onsemi.com 4 thermal characteristics figure 5. thermal response t, time (ms) 10 0.03 0.02 0.01 5.0 0.2 0.5 1.0 2.0 0.05 0.1 0.2 r(t), transient thermal resistance (normalized) 0.3 0.5 1.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k the temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + t jl 20 k lead length = 1 / 4 z jl (t) = r jl ? r(t) t jl = p pk r jl [r(t)] where: t jl = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. for example, r(t p ) = normalized value of transient resistance at time t p . time t p typical characteristics figure 6. typical breakover current figure 7. typical holding current t j , junction temperature ( c) -60 50 0 i -40 -20 100 140 25 75 100 t j , junction temperature ( c) 100 -60 10 0 i 40 -40 -20 0 20 100 125 , breakover current ( a) (bo) 80 60 120 140 , holding current (ma) h 120 80 060 40 20 20 30 40 50 60 70 80 90 150 175 200 225 250
mkp3v120, mkp3v240 http://onsemi.com 5 package dimensions 1 2 k a k d b case 267-03 issue g axial lead dim min max min max millimeters inches a 0.370 0.380 9.40 9.65 b 0.190 0.210 4.83 5.33 d 0.048 0.052 1.22 1.32 k 1.000 --- 25.40 --- style 2: no polarity notes: 1. dimensions and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 267-01 and 267-02 obsolete, new standard 267-03. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 mkp3v120/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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